Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films
Identifieur interne : 007671 ( Main/Repository ); précédent : 007670; suivant : 007672Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films
Auteurs : RBID : Pascal:07-0361660Descripteurs français
- Pascal (Inist)
- Faisceau ion, Nanocristal, Couche mince, RBS, Méthode ERDA, Analyse réaction nucléaire, Diffraction RX, PIXE, Profil profondeur, Elément trace, Croissance film, Zinc oxyde, Oxynitrure, Gallium nitrure, Indium nitrure, Semiconducteur III-V, Méthode IBAD, Epaisseur, Structure état amorphe, Traitement par plasma, Epitaxie jet moléculaire, Pulvérisation haute fréquence, Stoechiométrie, ZnO, GaN, In N, InN, 8107, 6110N, 8115J, Couche mince amorphe.
English descriptors
- KwdEn :
- Amorphous state structure, Amorphous thin film, Depth profiles, Elastic recoil detection analysis method, Film growth, Gallium nitrides, III-V semiconductors, Indium nitrides, Ion beam assisted deposition method, Ion beams, Molecular beam epitaxy, Nanocrystal, Nuclear reaction analysis, Oxynitrides, PIXE, Plasma assisted processing, RBS, Radiofrequency sputtering, Stoichiometry, Thickness, Thin films, Trace elements, XRD, Zinc oxides.
Abstract
The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle-induced x-ray emission (PIXE) have been used to quantitatively determine composition, uniformity, impurity, and elemental depth profiles of major, minor, and trace elements of group III-V nitride and zinc oxide (ZnO) thin films prepared by various growth techniques. The IBA revealed that an amorphous GaN film prepared by ion beam assisted deposition (IBAD) has large variations in film thickness and composition coupled with typically 10-20% oxygen that was found to be essential to stabilize their amorphous structure. The IBA characterization of plasma-assisted molecular beam epitaxy (PAMBE) grown GaN, InN, and InCrN films revealed composition, impurity, and uniformity information of the films. The IBA of ZnO films prepared by radio frequency (RF) sputtering showed that the Zn/O ratio often varied significantly over the film thickness. Hydrogen was found to be a major impurity in the films with around one present in the as-deposited ZnO films. It is clearly shown that the nondestructive, quantitative, and rapid IBA measurements are very useful to develop and optimize growth protocols in respect to film thickness, stoichiometry, and especially in regard to hydrogen and oxygen impurities for group III-V nitride and ZnO thin films prepared by various growth techniques.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films</title><author><name sortKey="Kennedy, J" uniqKey="Kennedy J">J. Kennedy</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Isotope Centre, GNS Science</s1><s2>Lower Hutt</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Lower Hutt</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington</s1><s2>Wellington</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Wellington</wicri:noRegion></affiliation></author><author><name sortKey="Markwitz, A" uniqKey="Markwitz A">A. Markwitz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Isotope Centre, GNS Science</s1><s2>Lower Hutt</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Lower Hutt</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington</s1><s2>Wellington</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Wellington</wicri:noRegion></affiliation></author><author><name sortKey="Trodahl, H J" uniqKey="Trodahl H">H. J. Trodahl</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington</s1><s2>Wellington</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Wellington</wicri:noRegion></affiliation></author><author><name sortKey="Ruck, B J" uniqKey="Ruck B">B. J. Ruck</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington</s1><s2>Wellington</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Wellington</wicri:noRegion></affiliation></author><author><name sortKey="Durbin, S M" uniqKey="Durbin S">S. M. Durbin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1><s2>Christchurch</s2><s3>NZL</s3><sZ>5 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Christchurch</wicri:noRegion></affiliation></author><author><name sortKey="Gao, W" uniqKey="Gao W">W. Gao</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Chemical and Materials Engineering, The University of Auckland</s1><s2>Auckland</s2><s3>NZL</s3><sZ>6 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Auckland</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0361660</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0361660 INIST</idno><idno type="RBID">Pascal:07-0361660</idno><idno type="wicri:Area/Main/Corpus">007731</idno><idno type="wicri:Area/Main/Repository">007671</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous state structure</term><term>Amorphous thin film</term><term>Depth profiles</term><term>Elastic recoil detection analysis method</term><term>Film growth</term><term>Gallium nitrides</term><term>III-V semiconductors</term><term>Indium nitrides</term><term>Ion beam assisted deposition method</term><term>Ion beams</term><term>Molecular beam epitaxy</term><term>Nanocrystal</term><term>Nuclear reaction analysis</term><term>Oxynitrides</term><term>PIXE</term><term>Plasma assisted processing</term><term>RBS</term><term>Radiofrequency sputtering</term><term>Stoichiometry</term><term>Thickness</term><term>Thin films</term><term>Trace elements</term><term>XRD</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Faisceau ion</term><term>Nanocristal</term><term>Couche mince</term><term>RBS</term><term>Méthode ERDA</term><term>Analyse réaction nucléaire</term><term>Diffraction RX</term><term>PIXE</term><term>Profil profondeur</term><term>Elément trace</term><term>Croissance film</term><term>Zinc oxyde</term><term>Oxynitrure</term><term>Gallium nitrure</term><term>Indium nitrure</term><term>Semiconducteur III-V</term><term>Méthode IBAD</term><term>Epaisseur</term><term>Structure état amorphe</term><term>Traitement par plasma</term><term>Epitaxie jet moléculaire</term><term>Pulvérisation haute fréquence</term><term>Stoechiométrie</term><term>ZnO</term><term>GaN</term><term>In N</term><term>InN</term><term>8107</term><term>6110N</term><term>8115J</term><term>Couche mince amorphe</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle-induced x-ray emission (PIXE) have been used to quantitatively determine composition, uniformity, impurity, and elemental depth profiles of major, minor, and trace elements of group III-V nitride and zinc oxide (ZnO) thin films prepared by various growth techniques. The IBA revealed that an amorphous GaN film prepared by ion beam assisted deposition (IBAD) has large variations in film thickness and composition coupled with typically 10-20% oxygen that was found to be essential to stabilize their amorphous structure. The IBA characterization of plasma-assisted molecular beam epitaxy (PAMBE) grown GaN, InN, and InCrN films revealed composition, impurity, and uniformity information of the films. The IBA of ZnO films prepared by radio frequency (RF) sputtering showed that the Zn/O ratio often varied significantly over the film thickness. Hydrogen was found to be a major impurity in the films with around one present in the as-deposited ZnO films. It is clearly shown that the nondestructive, quantitative, and rapid IBA measurements are very useful to develop and optimize growth protocols in respect to film thickness, stoichiometry, and especially in regard to hydrogen and oxygen impurities for group III-V nitride and ZnO thin films prepared by various growth techniques.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>36</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Group III Nitrides, SiC and ZnO</s1></fA09><fA11 i1="01" i2="1"><s1>KENNEDY (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>MARKWITZ (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>TRODAHL (H. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>RUCK (B. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>DURBIN (S. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>GAO (W.)</s1></fA11><fA12 i1="01" i2="1"><s1>STAHLBUSH (Robert)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>JENA (Debdeep)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>PHILLIPS (Jamie)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>National Isotope Centre, GNS Science</s1><s2>Lower Hutt</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington</s1><s2>Wellington</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1><s2>Christchurch</s2><s3>NZL</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Chemical and Materials Engineering, The University of Auckland</s1><s2>Auckland</s2><s3>NZL</s3><sZ>6 aut.</sZ></fA14><fA15 i1="01"><s1>Naval Research Laboratory</s1><s2>Washington, DC</s2><s3>USA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Notre Dame</s1><s2>South Bend, IN</s2><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Michigan</s1><s2>Ann Arbor, MI</s2><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA20><s1>472-482</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000146761430330</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>54 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0361660</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The ion beam analysis (IBA) techniques of Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA), and particle-induced x-ray emission (PIXE) have been used to quantitatively determine composition, uniformity, impurity, and elemental depth profiles of major, minor, and trace elements of group III-V nitride and zinc oxide (ZnO) thin films prepared by various growth techniques. The IBA revealed that an amorphous GaN film prepared by ion beam assisted deposition (IBAD) has large variations in film thickness and composition coupled with typically 10-20% oxygen that was found to be essential to stabilize their amorphous structure. The IBA characterization of plasma-assisted molecular beam epitaxy (PAMBE) grown GaN, InN, and InCrN films revealed composition, impurity, and uniformity information of the films. The IBA of ZnO films prepared by radio frequency (RF) sputtering showed that the Zn/O ratio often varied significantly over the film thickness. Hydrogen was found to be a major impurity in the films with around one present in the as-deposited ZnO films. It is clearly shown that the nondestructive, quantitative, and rapid IBA measurements are very useful to develop and optimize growth protocols in respect to film thickness, stoichiometry, and especially in regard to hydrogen and oxygen impurities for group III-V nitride and ZnO thin films prepared by various growth techniques.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A10N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Faisceau ion</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Ion beams</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Nanocristal</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Nanocristal</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>RBS</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>RBS</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Méthode ERDA</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Elastic recoil detection analysis method</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Método ERDA</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Analyse réaction nucléaire</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Nuclear reaction analysis</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>PIXE</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>PIXE</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>12</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Depth profiles</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Elément trace</s0><s5>13</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Trace elements</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Croissance film</s0><s5>14</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Film growth</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Oxynitrure</s0><s2>NA</s2><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Oxynitrides</s0><s2>NA</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium nitrure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium nitrides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium nitrure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium nitrides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Méthode IBAD</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Ion beam assisted deposition method</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Epaisseur</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Thickness</s0><s5>32</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Structure état amorphe</s0><s5>33</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Amorphous state structure</s0><s5>33</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Estructura estado amorfo</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Traitement par plasma</s0><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Plasma assisted processing</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>35</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0><s5>36</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0><s5>36</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0><s5>36</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>37</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>37</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>In N</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>49</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>6110N</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>8115J</s0><s4>INC</s4><s5>74</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>Couche mince amorphe</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="31" i2="3" l="ENG"><s0>Amorphous thin film</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>232</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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